Cambridge GaN Devices signs MoU with ITRI for GaN power

Cambridge GaN Devices (CGD), a fabless clean-tech semiconductor fab focused on developing energy-efficient GaN-based power devices that enable greener electronics, has signed a memorandum of understanding with the Industrial Technology Research Institute (ITRI) of Taiwan to strengthen the partnership in developing high-performance GaN solutions for USB-PD adapters. The agreement also covers the exchange of information about the domestic and international markets, joint visits to potential customers and promotion.

Andrea Bricconi, Commercial Director of CGD, said: “We are excited to collaborate with ITRI, an organization with an energy solutions research team that has extensive experience in developing energy solutions and holds numerous patents. We will present some of this company’s board designs at our stand during the upcoming PCIM trade fair in Nuremberg in June. These products leverage unique CGD chip architecture and patented ITRI designs to achieve product size reduction, high efficiency and power density, and cost competitiveness.

Wen-Tien Tsai, commercial power design team leader at Gel/Itri, said: “CGD’s integrated circuit-enhanced GAN – ICeGaN – is a novel platform that improves ease of use, facilitates intelligent temperature control and increases gate reliability. We are excited to incorporate these benefits into our new power designs.”

According to WBG’s leading analysts, Yole Group, the GaN market is expected to exceed $1 billion, with key growth in applications for communications power supplies, automotive DC/DC converters and on-board chargers. However, the first commercialized product on the market that used GaN devices were USB-PD adapters, and it is this market that will be addressed in the first partnership projects. In particular, the agreement covers the development of power solutions in the range of 140-240 W with power densities exceeding 30 W/inch³ for applications in electromobility, power tools, notebooks and mobile phones.