Cambridge GaN Devices Advanced GaN-based power devices address demanding applications

Ga NX Tx C Promotion

ZRDS(on) at levels as low as 25 mΩ, Cambridge GaN Devices (CGD) ICeGaN P2 series of power ICs support multi-kilowatt power at the highest levels of efficiency. These high-power ICs offer simplified gate driver design and advanced, high-efficiency packages, enabling systems to achieve and exceed 100 kW/rack power densities in data centers, for example.

Gallium-nitride (GaN) transistors with ICeGaN enhancement mode can be used like silicon MOSFETs without the need for special gate drivers, control circuits, or gate voltage limiting mechanisms.

GaN devices operate with standard gate drivers up to 22 V. A built-in Miller clamp with a threshold voltage set at approximately 3 V eliminates the need to provide negative gate voltages to keep the device off when desired. Additional features include integrated functions such as current sensing, and device cooling can be greatly improved by connecting the GaN CGD to ground.

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