CGD devices have the lowest on-resistance ever

Cambridge GaN Devices (CGD) has introduced its lowest ever on-state resistor (R_DS(Italian)) parts that are designed to provide the benefits of GaN in high-power applications such as data centers, inverters, motor drives and other industrial power supplies.

The ICeGaN P2 series ICs feature R technology_DS(Italian) levels up to 25 mΩ, supporting multi-kW power levels with the highest efficiency.

“This new series of Power GaN ICs achieves and even exceeds the 100 kW/rack data center power density required by the latest TDP (Thermal Design Power) trends in high-density computing,” says CGD CEO Andrea Bricconi, “noting for motors driving inverters, developers are looking to GaN to reduce heat output for lower, longer-lasting system power. These are just two examples of the markets that CGD is currently aggressively targeting with its new high-power ICeGaN ICs.”

With a built-in Miller clamp to eliminate firing losses during fast switching and the use of 0V shutdown to minimize reverse conduction losses, ICeGaN ICs outperform discrete e-Mode GaN and other legacy technologies.

The new packages offer increased thermal resistance of just 0.28 K/W, and the dual-gate pinout of the dual-sided DHDFN-9-1 (Dual Heat-spreader DFN) package facilitates optimal PCB layout and simple paralleling for scalability. enabling customers to easily support multi-kW applications.

The new packaging is also designed to increase productivity, with wettable sides making optical inspection easier.

Currently, samples of new ICeGaN P2 series power systems are being taken. The family includes four devices with R technology_DS(Italian) levels 25 mΩ and 55 mΩ, rated for 60 A and 27 A, in DHDFN-9-1 and BHDFN-9-1 (bottom DFN heat spreader) housings with dimensions of 10 x 10 mm.

Like all CGD ICeGaN products, the P2 series can be driven using any standard MOSFET or IGBT driver.

Two demonstration boards feature new P2 devices: a single 3-phase automotive inverter demonstration board, developed in collaboration with the French public research and innovation institute IFP Energies nouvelles, and a 3 kW totem power factor correction demonstration board.