Cambridge GaN Devices signs a Memorandum of Understanding with ITRI for the development of GaN-based power supplies

News: Microelectronics

May 30, 2024

Fabless Cambridge GaN Devices Ltd (CGD) – spun out of the University of Cambridge in 2016 to design, develop and commercialize power transistors and integrated circuits using GaN substrates on silicon – has signed a memorandum of understanding (MoU) with the Taiwan Industrial Technology Research Institute (ITRI) strengthens partnership to develop high-performance GaN solutions for USB-PD adapters. The memorandum of understanding also covers the exchange of information on the domestic and international market, joint visits to potential customers and promotion.

Photo: Demonstration of the 140-240 W USB-PD adapter using ICeGaN.

“We are excited to partner with ITRI, an organization with a power solutions research team that has extensive experience in developing power solutions and holds multiple patents,” comments CGD Commercial Director, Andrea Bricconi. “We will be demonstrating some of their board designs at our stand at the upcoming PCIM (Power, Control and Intelligent Motion) trade fair in Nuremberg in June. These products leverage unique CGD chip architecture and patented ITRI designs to achieve product size reduction, high efficiency and power density, and cost competitiveness,” he added.

“CGD’s enhanced GaN chip ICeGaN is a novel platform that improves user friendliness, facilitates intelligent temperature control, and increases gate reliability,” says Wen-Tien Tsai, Commercial Power Design team leader at ITRI Green Energy & Environment Research Laboratories (GEL). ). “We are excited to incorporate these benefits into our new power designs.”

According to analyst firm Yole Group, the GaN market is expected to exceed $1 billion, with key growth in applications for communications power supplies, automotive DC/DC converters and on-board chargers. However, the first commercialized product on the market that used GaN devices were USB-PD adapters, and it is this market that will be addressed in the first partnership projects. In particular, the agreement covers the development of power solutions in the range of 140-240W with power densities exceeding 30W/inch3 for applications in electromobility, power tools, notebooks and mobile phones.

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Tags: GaN power devices

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